Advanced Semiconductor and Organic Nano-Techniques by Hadis Morkoc

By Hadis Morkoc

  • Materials Scientists, Physicists, Engineers.

Preface for quantity I

, Pages xiii-xv, Hadis Morkoç
List of members for quantity I

, Page xvii
Preface for quantity II

, Pages ix-xiii, Hadis Morkoç
List of participants for quantity II

, Pages xv-xvi
Preface for quantity III

, Pages xi-xvii, Hadis Morkoç
List of individuals for quantity III

, Pages xix-xx
Chapter 1 - rising Advances in Microelectronics, Optoelectronics and Bioelectronics

, Pages 1-145, H. Morkoç
Chapter 2 - The problem of constructing a Roadmap from Microelectronics to Nanoelectronics

, Pages 147-209, R. Doering
Chapter three - CMOS Scaling to Nanometer Lengths

, Pages 211-238, Y. Taur
Chapter four - Sub-20-nm Electron Devices

, Pages 239-302, ok. Likharev
Chapter five - purposes of unmarried Electron Tunnelling

, Pages 303-324, J.P. Pekola
Chapter 6 - Silicon on Insulator: expertise and Devices

, Pages 325-365, S. Cristoloveanu, F. Balestra
Chapter 7 - Quantum Dot Lasers

, Pages 367-410, D.G. Deppe, H. Huang
Chapter eight - Nanotechnology and Magnetic Memories

, Pages 411-439, A.V. Pohm
Chapter nine - Quantum details technology from the viewpoint of a tool and fabrics Engineer

, Pages 441-502, S. Bandyopadhyay
Chapter 1 - Engineering the digital constitution and the Optical homes of Semiconductor Quantum Dots

, Pages 1-50, M. De Giorgi, R. Rinaldi, T. Johal, G. Pagliara, A. Passaseo, M. De Vittorio, M. Lomascolo, R. Cingolani, A. Vasanelli, R. Ferreira, G. Bastard
Chapter 2 - GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors

, Pages 51-145, H. Morkoç
Chapter three - Ultraviolet Photodetectors according to GaN and AlGaN

, Pages 147-190, H. Temkin
Chapter four - natural Field-Effect Transistors for Large-Area Electronics

, Pages 191-240, C.D. Dimitrakopoulos
Chapter five - natural Optoelectronics: The Case of Oligothiophenes

, Pages 241-291, G. Gigli, M. Anni, R. Cingolani, G. Barbarella
Chapter 6 - Single-Walled Carbon Nanotubes for Nanoelectronics

, Pages 293-343, M.S. Fuhrer
Chapter 7 - brief Wavelength III-Nitride Lasers

, Pages 345-405, A.V. Nurmikko
Chapter 1 - electric Conduction via Molecules

, Pages 1-41, F. Zahid, M. Paulsson, S. Datta
Chapter 2 - Molecular digital Devices

, Pages 43-187, J. Chen, M.A. Reed, S.M. Dirk, D.W. cost, A.M. Rawlett, J.M. travel, D.S. Grubisha, D.W. Bennett
Chapter three - Fabrication of Nanoscale constructions utilizing STM and AFM

, Pages 189-224, A.A. Baski
Chapter four - Optical Nanosensors for organic Applications—Spectroscopic innovations on the mobile Level

, Pages 225-250, B.M. Cullum, T. Vo-Dinh
Chapter five - present concerns and Advances in Dissociated mobilephone Culturing on Nano-and Microfabricated Substrates

, Pages 251-318, H.G. Craighead, C.D. James, A.M.P. Turner
Chapter 6 - electric Fields: Their Nature and impact on organic Systems

, Pages 319-346, R.J. Colello, J.K. Alexander
Chapter 7 - DNA Chips Come of Age

, Pages 347-370, G. Ramsay
Chapter eight - organic Computation: From DNA to Cells

, Pages 371-405, C.C. Maley
Chapter nine - mobile Manipulations

, Pages 407-482, C. González, S.D. Collins
Chapter 10 - Fluidics in Microchannels

, Pages 483-504, P.M.St. John, M. Deshpande
Chapter eleven - Hybrid organic Nanomachines

, Pages 505-540, J.J. Schmidt, C.D. Montemagno
Index for quantity I

, Pages 503-519
Index for quantity II

, Pages 407-421
Index for quantity III

, Pages 541-555

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Extra info for Advanced Semiconductor and Organic Nano-Techniques

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11. In this device, substrate transfer processes are used to define narrow emitterbase and collector-base junctions, aligned with respect to one another on opposing sides of the base epitaxial layer. Because the collector-base junction lies only directly below the emitter-base junction, excess collector capacitance is eliminated, thereby increasing device bandwidth. 1 ^m, basespreading resistance is greatly decreased. In addition, transferring the device structure onto a metal substrate with reduced resistance aids in enhancing the radio frequency performance.

8 GHz. Car to road communication CCD camera Rear magnetic sensor Actuators (steering throttle, break) \ Car to car distance sensor Front magnetic sensor ' - " J ^ ^ Travel trajectory '"o,,''o,^ Magnetic nail FIG. 9. An artistic view of a car of the future equipped with collision avoidance radar system and automatic lane adherence system. 20 2. H. MoRKOC Sii __ vGCv MODFET STRUCTURES Formation of the 2D electron or hole gas is also possible using Sii_vGev, as discussed in a review by Zhou and Morko^ (1993).

We should caution that while the power density figure can be used during the evolution process, eventually the total power figure must prevail. Normalized power density measurements, though frequently reported (a trap that the present author also fell into), are often misleading because smaller gate widths naturally lead to larger power densities. V. Heterojunction Bipolar Transistors The heterojunction bipolar transistor (HBT) was first proposed by Shockley (1951). As alluded earlier, the electronics revolution has its genesis in the bipolar transistor.

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